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Templates Sizes Applications GaN on Sapphire 2” to 4” Blue and White LED applications AlN on Silicon Carbide 2” to 4” Typically used for RF electronic devices such as HEMT AlGaN on Sapphire 2” or 3” Optoelectronic devices operating in UV spectral region InN on Sapphire Research grade available in 2” For work on sensors and high frequency electronic devices InGaN on Sapphire 2” for Green LED Green LED and green laser Developments
Growth rate of the HVPE process can be up to several microns per minutes, resulting in high quality, cracker free GaN or AlN templates. Figure 1 shows the X-ray diffraction of a XXX thick GaN template on sapphire. The narrow FWHM of XX arc demonstrates excellent material quality. (I need to get an x-ray scan from these folks this week.)
CrystalFlex
Производство Oxford Instruments Plasma Technology
Oxford Instruments’ leading edge CrystalFlex HVPE tool provides a cost
effective
route for the production of high quality epitaxial GaN, AlGaN and AlN
single crystal materials.
The equipment is designed for R&D or full scale production of Group
III nitrides with the focus on process stability, reproducibility, and
optimal source materials usage. The flexible reactor configuration
enables end users to grow a variety of products ranging from GaN to AlN
and AlGaN with thickness from a few microns to a few millimeters.
Process Improvement:
- Proprietary gas injector design for uniform gas flow
- High capacity source boat design for increased uptime
- Extended thermal flat zone for excellent thickness uniformity
- Process support by a highly experienced team of scientists with in-depth process knowledge of HVPE
- Visible and UV LEDs
- Laser diodes
- RF electronic devices
- Power electronic devices
| Templates | Sizes | Applications |
| GaN on Sapphire | 2” to 4” | Blue and White LED applications |
| AlN on Silicon Carbide | 2” to 4” | Typically used for RF electronic devices such as HEMT |
| AlGaN on Sapphire | 2” or 3” | Optoelectronic devices operating in UV spectral region |
| InN on Sapphire | Research grade available in 2” | For work on sensors and high frequency electronic devices |
| InGaN on Sapphire | 2” for Green LED | Green LED and green laser Developments |
Templates Sizes Applications GaN on Sapphire 2” to 4” Blue and White LED applications AlN on Silicon Carbide 2” to 4” Typically used for RF electronic devices such as HEMT AlGaN on Sapphire 2” or 3” Optoelectronic devices operating in UV spectral region InN on Sapphire Research grade available in 2” For work on sensors and high frequency electronic devices InGaN on Sapphire 2” for Green LED Green LED and green laser Developments
Growth rate of the HVPE process can be up to several microns per minutes, resulting in high quality, cracker free GaN or AlN templates. Figure 1 shows the X-ray diffraction of a XXX thick GaN template on sapphire. The narrow FWHM of XX arc demonstrates excellent material quality. (I need to get an x-ray scan from these folks this week.)
CrystalFlex key features & benefits:
Operating benefits:
- Wide range of growth rates from 1 to 200 microns/hour
- GaN thickness from a few microns up to a few
- millimeters
- N- and p-type dopants available
- Flexible wafer size configuration from 50mm to 150mm
- High quality, crack free epitaxial films with excellent
- thickness uniformity
- Customized source configurations to allow material
- growth of Group III nitrides for different applications
Operating benefits:
- Atmospheric operation – no vacuum facilities required
- Low operating cost – no expensive metalorganics
- required
- Reduced downtime – easily replaceable growth liners to
- combat parasitic deposition
- Clean and controlled environment – N2-purge glovebox
- enclosure to reduce particle contamination of wafers
- and source material
- Efficient service support – dedicated global service
- support team with fast response
